型号:

BSS126 H6906

RoHS:无铅 / 符合
制造商:Infineon Technologies描述:MOSFET N-CH 600V 21MA SOT23
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
BSS126 H6906 PDF
标准包装 1
系列 SIPMOS®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 耗尽模式
漏极至源极电压(Vdss) 600V
电流 - 连续漏极(Id) @ 25° C 21mA
开态Rds(最大)@ Id, Vgs @ 25° C 500 欧姆 @ 16mA,10V
Id 时的 Vgs(th)(最大) 1.6V @ 8µA
闸电荷(Qg) @ Vgs 2.1nC @ 5V
输入电容 (Ciss) @ Vds 28pF @ 25V
功率 - 最大 500mW
安装类型 表面贴装
封装/外壳 TO-236-3,SC-59,SOT-23-3
供应商设备封装 PG-SOT23-3
包装 剪切带 (CT)
其它名称 BSS126 H6906CT
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